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Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

Abstract : Hexagonal boron nitride was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6) as precursor. Our photoemission analysis shows that several components of boron and nitrogen are detected, suggesting the complex nature of the bonds noticeably at the h-BN/Ni interface. The BN thickness was estimated by photoemission and the BN distribution by ToF-SIMS. Due to the catalytic effect of the Ni substrate, this thickness is self-limited in the range 1-2 layers regardless of the borazine dose. A spatially resolved photoemission study was carried out before and after transfer of the h-BN on a Si substrate. It shows that a strong electronic coupling exists at the interface between h-BN and polycrystalline Ni, not only for (111) grains, which disappears after transfer on Si. In addition, we highlight the importance of detecting π plasmons in the photoemission spectra to confirm the hexagonal nature of boron nitride.
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Contributor : Dominique Vignaud Connect in order to contact the contributor
Submitted on : Tuesday, July 20, 2021 - 4:26:34 PM
Last modification on : Friday, December 3, 2021 - 3:56:03 PM
Long-term archiving on: : Thursday, October 21, 2021 - 6:57:01 PM



Jawad Hadid, Ivy Colambo, Christophe Boyaval, Nicolas Nuns, Pavel Dudin, et al.. Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils. 2D Materials, IOP Publishing, 2021, ⟨10.1088/2053-1583/ac1502⟩. ⟨hal-03292918⟩



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