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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Abstract : We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.
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https://hal.archives-ouvertes.fr/hal-03467546
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Submitted on : Monday, December 6, 2021 - 5:12:00 PM
Last modification on : Sunday, May 1, 2022 - 3:17:36 AM
Long-term archiving on: : Monday, March 7, 2022 - 7:40:34 PM

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Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, et al.. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. Solid-State Electronics, Elsevier, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

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