AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications - Institut d'électronique, de microélectronique et de nanotechnologie Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2022

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marc Portail
Marcin Zielinski
  • Fonction : Auteur
  • PersonId : 860779

Résumé

In this work, an AlGaN/GaN HEMT structure is grown on a 0.8 μm thick 3C-SiC layer on high resistivity Silicon substrate. The RF propagation losses are investigated and compared with the ones of epi-layers grown directly on Silicon and on 6H-SiC substrates. Short gate length transistors are fabricated using e-beam lithography. In spite of ohmic contact resistance of 0.6 Ω.mm, a saturated current density of 0.7 A/mm at a gate bias of +1V and a transconductance peak higher to 250 mS/mm for 75 nm T-shaped gate transistors are reached on structure with thick 3C-SiC template. Moreover, for the first time, transition frequencies f T /f max of 60/98 GHz are reported on such 3C-SiC template.
Fichier principal
Vignette du fichier
Lesecq_2022_MSF.1062.482.pdf (526.19 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-03741438 , version 1 (01-08-2022)

Licence

Paternité

Identifiants

Citer

Marie Lesecq, Eric Frayssinet, Marc Portail, Micka Bah, N. Defrance, et al.. AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications. Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩. ⟨hal-03741438⟩
55 Consultations
122 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More