Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers - Université de Lille Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2011

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Résumé

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Domaines

Chimie

Dates et versions

hal-02507811 , version 1 (13-03-2020)

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Citer

Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, et al.. Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers. Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩. ⟨hal-02507811⟩
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