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Article dans une revue

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Abstract : Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.
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https://hal.univ-lille.fr/hal-02507811
Contributeur : Lilloa Université de Lille <>
Soumis le : vendredi 13 mars 2020 - 15:27:38
Dernière modification le : mercredi 15 avril 2020 - 14:56:09

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Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, et al.. Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers. Materials Science Forum, Trans Tech Publications Inc., 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩. ⟨hal-02507811⟩

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