Accéder directement au contenu Accéder directement à la navigation
Article dans une revue

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

Abstract : The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
Type de document :
Article dans une revue
Domaine :
Liste complète des métadonnées

https://hal.univ-lille.fr/hal-02511264
Contributeur : Lilloa Université de Lille <>
Soumis le : mercredi 18 mars 2020 - 16:16:07
Dernière modification le : jeudi 4 juin 2020 - 15:08:03

Identifiants

Collections

Citation

Maya Marinova, Ariadne Andreadou, Jian Wu Sun, Jean Lorenzzi, Alkyoni Mantzari, et al.. Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers. Materials Science Forum, Trans Tech Publications Inc., 2011, Materials Science Forum, 679-680, pp.241-244. ⟨10.4028/www.scientific.net/MSF.679-680.241⟩. ⟨hal-02511264⟩

Partager

Métriques

Consultations de la notice

242