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Article Dans Une Revue Nanotechnology Année : 2010

Blocking of indium incorporation by antimony in III–V-Sb nanostructures

Résumé

The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Dates et versions

hal-04434315 , version 1 (02-02-2024)

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Citer

a M Sanchez, a M Beltran, R Beanland, T Ben, M H Gass, et al.. Blocking of indium incorporation by antimony in III–V-Sb nanostructures. Nanotechnology, 2010, Nanotechnology, 21 (14), pp.145606. ⟨10.1088/0957-4484/21/14/145606⟩. ⟨hal-04434315⟩
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