Towards III-V semiconductor-based artificial graphene - Université de Lille
Communication Dans Un Congrès Année : 2021

Towards III-V semiconductor-based artificial graphene

Résumé

We present the fabrication and characterization of III-V semiconductor-based samples designed to mimic 2D material electronic properties thanks to a nanometer-scale honeycomb potential. STM/STS results demonstrate that a well reconstructed surface is recovered after processing and that the honeycomb potential induces specific spectral features. On the other hand, electronic transport measurements evidence that transport properties are preserved after the introduction of the nanoscale potential and even exhibit extra features currently under investigation.
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Dates et versions

hal-04485771 , version 1 (01-03-2024)

Identifiants

  • HAL Id : hal-04485771 , version 1

Citer

Nathali. A. Franchina Vergel, L. Christiaan Post, Davide Sciacca, Maxime Berthe, Francois Vaurette, et al.. Towards III-V semiconductor-based artificial graphene. Compound Semiconductor Week2021, CSW 2021, May 2021, Stockholm, Suède., May 2021, Stockholm, Sweden. ⟨hal-04485771⟩
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