Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours
Résumé
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (C oss ) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (C iss ) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design.