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Optoelectronic mixing with high-frequency graphene transistors

Abstract : Abstract Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level ( E F ). At low E F (<130 meV), a positive photocurrent is generated, while at large E F (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.)
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Contributor : Emiliano Pallecchi Connect in order to contact the contributor
Submitted on : Thursday, June 17, 2021 - 1:39:37 PM
Last modification on : Friday, December 3, 2021 - 3:56:03 PM
Long-term archiving on: : Saturday, September 18, 2021 - 6:33:05 PM


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A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, et al.. Optoelectronic mixing with high-frequency graphene transistors. Nature Communications, Nature Publishing Group, 2021, 12 (1), ⟨10.1038/s41467-021-22943-1⟩. ⟨hal-03259559⟩



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