Effect of electronic doping on the plasticity of homoepitaxial 4H-SiC single crystals - Université de Lille
Communication Dans Un Congrès Année : 2011

Dates et versions

hal-02447241 , version 1 (21-01-2020)

Identifiants

Citer

J.L. Demenet, M Amer, Alexandre Mussi, Jacques Rabier. Effect of electronic doping on the plasticity of homoepitaxial 4H-SiC single crystals. Extended Defects in Semiconductors, Sep 2010, Brighton, United Kingdom. ⟨10.1088/1742-6596/281/1/012003⟩. ⟨hal-02447241⟩
45 Consultations
0 Téléchargements

Altmetric

Partager

More