Accéder directement au contenu Accéder directement à la navigation

Ferroelectric control of a Mott insulator

Abstract : The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems and pave the way toward efficient Mott-tronics devices.
Type de document :
Article dans une revue
Liste complète des métadonnées

Littérature citée [23 références]  Voir  Masquer  Télécharger

https://hal.univ-lille.fr/hal-02509391
Contributeur : Lilloa Université de Lille <>
Soumis le : lundi 16 mars 2020 - 16:59:50
Dernière modification le : mardi 17 mars 2020 - 01:29:12

Fichier

srep02834.pdf
Fichiers éditeurs autorisés sur une archive ouverte

Licence


Distributed under a Creative Commons Paternité - Pas d'utilisation commerciale - Pas de modification 4.0 International License

Identifiants

Collections

Citation

Hiroyuki Yamada, Maya Marinova, Philippe Altuntas, Arnaud Crassous, Laura Bégon-Lours, et al.. Ferroelectric control of a Mott insulator. Scientific Reports, Nature Publishing Group, 2013, 3, pp.2834. ⟨10.1038/srep02834⟩. ⟨hal-02509391⟩

Partager

Métriques

Consultations de la notice

48

Téléchargements de fichiers

26