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Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures

Abstract : We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.
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https://hal.univ-lille.fr/hal-02510296
Contributeur : Lilloa Université de Lille <>
Soumis le : mardi 17 mars 2020 - 16:18:44
Dernière modification le : mercredi 18 mars 2020 - 01:35:04

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Julien Godet, Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli. Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures. Journal of Applied Physics, 2009, Journal of Applied Physics, 105 (2), pp.026104. ⟨10.1063/1.3072707⟩. ⟨hal-02510296⟩

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