Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts - Université de Lille
Article Dans Une Revue Materials Science Forum Année : 2010

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Résumé

We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

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Matériaux

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https://hal.univ-lille.fr/hal-02510365

Soumis le : mardi 17 mars 2020-17:07:34

Dernière modification le : lundi 16 décembre 2024-15:39:49

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hal-02510365 , version 1 (17-03-2020)

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Frédéric Mercier, Irina G. Galben-Sandulache, Maya Marinova, Georgios Zoulis, Thierry Ouisse, et al.. Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts. Materials Science Forum, 2010, Materials Science Forum, 645-648, pp.59-62. ⟨10.4028/www.scientific.net/MSF.645-648.59⟩. ⟨hal-02510365⟩

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