This work focuses on the Transmission Electron Microscopy investigation of p‐type doped 3C‐SiC layers grown by Vapor‐Liquid‐Solid mechanism using Si‐Ga melts on 4H‐SiC substrates. Ga concentration strongly influences the appearance of defects in the grown layers. Ga inclusions are observed only in the layer grown at the highest temperature and lowest Ga content in the melt. At the highest concentration of Ga in the melt main defects are dislocations forming periodic bands along 〈equation image〉 and 〈equation image〉 directions. The most appropriate conditions (in terms of defect density) for VLS growth using SiGa melts, as defined from the current study, should be growth in Si25Ga75 alloy at T = 1200 ºC.