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The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

Abstract : In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.
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https://hal.univ-lille.fr/hal-02511300
Contributeur : Lilloa Université de Lille <>
Soumis le : mercredi 18 mars 2020 - 16:31:41
Dernière modification le : mercredi 18 mars 2020 - 16:31:42

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Maya Marinova, Alkyoni Mantzari, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, et al.. The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy. Materials Science Forum, 2010, Materials Science Forum, 645-648, pp.367-370. ⟨10.4028/www.scientific.net/MSF.645-648.367⟩. ⟨hal-02511300⟩

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