A Wide Tuning Range Delay Element for Event-Driven Processing of Low-Frequency Signals in 28-nm FD-SOI CMOS

Angel Gonzalez; Antoine Frappé; Benoit Larras; Andreas Kaiser; Philippe Cathelin

doi:10.1109/LSSC.2020.3010877

Article dans une revue

A Wide Tuning Range Delay Element for Event-Driven Processing of Low-Frequency Signals in 28-nm FD-SOI CMOS

Angel Gonzalez ^{1, 2} Antoine Frappé ¹ Benoit Larras ¹ Andreas Kaiser ¹ Philippe Cathelin ²

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

2 ST-CROLLES - STMicroelectronics [Crolles]

Abstract : This paper presents a widely tunable digital delay element suitable for low-power low-frequency continuous-time digital signal processing systems. The design uses features of the 28 nm FD-SOI CMOS technology to precisely control currents in the pA range and significantly reduce leakage power. The measured tuning range is significantly larger than prior art covering more than 3 decades from 30 ns to 100 µs making it suitable for CT-DSP low frequency filters. At 0.7 V supply voltage, the dynamic power consumption is 15 fJ/event with a residual power consumption due to leakage of 14 pW.

Keywords : CT-DSP Digital delay FD-SOI CMOS IoT Ultra-low-power circuits

Type de document :

Article dans une revue

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

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https://hal.univ-lille.fr/hal-03041576
Contributeur : Andreas Kaiser <>
Soumis le : samedi 5 décembre 2020 - 11:59:43
Dernière modification le : mercredi 16 décembre 2020 - 13:33:35

A Wide Tuning Range Delay Element for Event-Driven Processing of Low-Frequency Signals in 28-nm FD-SOI CMOS

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A Wide Tuning Range Delay Element for Event-Driven Processing of Low-Frequency Signals in 28-nm FD-SOI CMOS

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