Evidencing the Influence of Defects on the Charge Storage Mechanism of Sputtered Vanadium Nitride Pseudocapacitive Electrode - Université de Lille
Communication Dans Un Congrès Année : 2020

Evidencing the Influence of Defects on the Charge Storage Mechanism of Sputtered Vanadium Nitride Pseudocapacitive Electrode

Camille Douard

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Chimie
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Dates et versions

hal-04303350 , version 1 (23-11-2023)

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  • HAL Id : hal-04303350 , version 1

Citer

Thierry Brousse, Etienne Le Calvez, Kevin Robert, Marielle Huvé, Maya Marinova, et al.. Evidencing the Influence of Defects on the Charge Storage Mechanism of Sputtered Vanadium Nitride Pseudocapacitive Electrode. PRiME 2020 (Pacific Rim Meeting, ECS, ECSJ, KECS Joint Meeting), Oct 2020, Visioconférence, Japan. ⟨hal-04303350⟩
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