Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier; Irina G. Galben-Sandulache; Maya Marinova; Georgios Zoulis; Thierry Ouisse; Efstathios K. Polychroniadis; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.645-648.59

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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier ¹ Irina G. Galben-Sandulache ¹ Maya Marinova ² Georgios Zoulis ³ Thierry Ouisse ¹ Efstathios K. Polychroniadis ² Didier Chaussende ¹

1 LMGP - Laboratoire des matériaux et du génie physique

2 Department of Physics [Thessaloniki]

3 GES - Groupe d'étude des semiconducteurs

Abstract : We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

Keywords : Liquid Phase Epitaxy (LPE) Raman Spectroscopy TEM

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Chimie / Matériaux

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https://hal.univ-lille.fr/hal-02510365
Contributeur : Lilloa Université de Lille <>
Soumis le : mardi 17 mars 2020 - 17:07:34
Dernière modification le : mercredi 15 avril 2020 - 14:56:16

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

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