Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region - Université de Lille
Communication Dans Un Congrès Année : 2022

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

Résumé

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.

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Sciences de l'ingénieur [physics]
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https://hal.univ-lille.fr/hal-03768320

Soumis le : samedi 3 septembre 2022-10:07:54

Dernière modification le : lundi 3 juin 2024-12:16:26

Archivage à long terme le : dimanche 4 décembre 2022-18:03:49

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Dates et versions

hal-03768320 , version 1 (03-09-2022)

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  • HAL Id : hal-03768320 , version 1

Citer

Xuyang Lu, Arnaud Videt, Ke Li, Soroush Faramehr, Petar Igic, et al.. Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region. EPE 2022 ECCE Europe (European Power Electronics), Sep 2022, Hannover, Germany. ⟨hal-03768320⟩

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