Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region - Université de Lille Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

Résumé

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.
Fichier principal
Vignette du fichier
Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds.pdf (990.94 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03768320 , version 1 (03-09-2022)

Identifiants

  • HAL Id : hal-03768320 , version 1

Citer

Xuyang Lu, Arnaud Videt, Ke Li, Soroush Faramehr, Petar Igic, et al.. Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region. EPE 2022 ECCE Europe (European Power Electronics), Sep 2022, Hannover, Germany. ⟨hal-03768320⟩
34 Consultations
15 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More