Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region
Résumé
A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.
Fichier principal
Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds.pdf (990.94 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)